smd type 1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1gate 2drain 3 source features r ds(on) = 32m (typ.), v gs = 10v, i d = 16a q g(tot) = 39nc (typ.), v gs = 10v low miller charge low q rr body diode uis capability (single pulse and repetitive pulse) absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 150 v gate to source voltage v gss 20 v drain current-continuous t c =25 37 a t a =25 5a power dissipation 150 w derate above 25 1.0 w/ thermal resistance junction to ambient r ja 43 /w channel temperature t ch 175 storage temperature t stg -55to+175 p d i d 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123 sales@twtysemi.com 1 of http://www.twtysemi.com smd type kdb2552 (FDB2552) smd type product specification
smd type electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain to source breakdown voltage v dss i d =250a v gs =0v 150 v v ds =120v,v gs =0 1 v ds =120v,v gs =0,t c =150 250 gate leakage current i gss v gs = 20v 100 na gate threshold voltage v gs(th) v ds =v gs ,i d = 250a 2.0 4.0 v v gs =10v,i d =16a 0.032 0.036 v gs =6v,i d =8a 0.036 0.054 v gs =10v,i d =16a,t c =175 0.084 0.097 input capacitance c iss 2800 pf output capacitance c oss 285 pf reverse transfer capacitance c rss 55 pf total gate charge at 10v q g(tot) v gs = 0v to 10v 39 51 nc threshold gate charge q g(th) v gs =0vto2v 5.2 6.8 nc gate to source gate charge q gs v ds = 75v, 13.5 nc gate charge threshold to plateau q gs2 i g =1.0ma 8.4 nc gate to drain "miller" charge q gd i d = 16a 8.3 nc turn-on time t on 62 ns turn-on delay time t d(on) 12 ns rise time t r 29 ns turn-off delay time t d(off) 36 ns fall time t f 29 ns turn-off time t off 97 ns reverse recovery time t rr i sd = 16a, d isd /d t = 100a/s 90 ns reverse recovered charge q rr i sd = 16a, d isd /d t = 100a/s 242 nc i sd = 16a 1.25 v i sd =8a 1.0 v source to drain diode voltage v sd a drain to source on-state resistance r ds(on) v ds =25v,v gs =0,f=1mhz drain cut-off current i dss v dd = 75v, i d = 16a v gs = 10v, r gs =8.2 kdb2552 (FDB2552) 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com smd type product specification
|
